Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Wang C.
Institute of Physics, Academia Sinica
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Chang C.
Epitech Technology Corporation
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CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHIOU Y.
Department of Electronics Engineering, Southern Taiwan University of Technology
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SU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHANG C.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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LIN T.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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FANG T.
Department of Electronics Engineering, Southern Taiwan University of Technology
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TANG J.
Department of Electronics Engineering, Southern Taiwan University of Technology
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Chiou Y.
Department Of Electronics Engineering Southern Taiwan University Of Technology
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Chiou Y.
Department Of Electrical Engineering National Cheng Kung University
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Lin T.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chang C.
Institute Of Applied Mechanics National Taiwan University
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Wang C.
Institute Of Physics Academia Sinica
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Chang S.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Su Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
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Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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WANG C.
Institute of Nuclear Science, National Tsing Hua University
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