A Tristate Switch Using Triangular Barriers
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概要
- 論文の詳細を見る
We demonstrate a new GaAs regenerative switching device with a double triangular barrier (DTB) structure, i. e., p^+-i-δ(n^+)-i-δ(p^+)-i-n^+, prepared by molecular beam epitaxy (MBE). Using the concept of sequential collapse of the internal barriers, two distinctive switching regions are established. First, a negative resistance region (S-type) is observed, followed by a positive resistance region (inverted N-shape) in between the switching behavior with the increase of applied bias. This device may have applicability for tristate logic circuits.
- 社団法人応用物理学会の論文
- 1990-02-20
著者
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CHANG C.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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Wang Y.
Department Of Electrical Engineering National Cheng Kung University
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Chang C
National Chiao Tung Univ. Twn
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YARN K.
Department of Electrical Engineering, National Cheng Kung University
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Yarn K.
Department Of Electrical Engineering National Cheng Kung University
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Hsu C.
Semiconductor Technology And Application Research (star) Group Department Of Electrical Engineering
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Chang C.
Institute Of Applied Mechanics National Taiwan University
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Wang Y.
Department of Chemical Engineering, National Tsing Hua University
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