Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Chang C.
Epitech Technology Corporation
-
SHEN C.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
SHEI S.
Department of Electronic Engineering, National University of Tainan
-
CHEN W.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
SU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
LIN Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
CHANG C.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
KE T.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
SHEI S.
South Epitaxy Corporation
-
Chen W.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Lin Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Ko T.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chang C.
Institute Of Electronics Engineering National Chiao Tung University
-
Su Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chang C.
Institute Of Applied Mechanics National Taiwan University
-
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Shen C.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chang S.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Su Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
-
Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
関連論文
- Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method
- Viscous Flow Behavior and Workability of Mg-Cu-(Ag)-Gd Bulk Metallic Glasses
- High Reliable Nitride Based LEDs with Internal ESD Protection
- Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
- Nitride-based p-i-n Photodetectors with ITO p-contacts
- Nitride based Power Chip with ITO p-Contact and Al back-side Reflector
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
- Observation of large spectral blue-shift in photoluminescence spectra of Mg-doped gallium nitride Nanorods
- Growth of Nanopucks on Pb Quantum Islands
- MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
- Improvement in Characteristics of InGaAs/GaAs Quantum-Dot PIN Photodetectors with Antireflection Photonic Crystals
- AlGaN MSM Photodetectors with SiN/GaN double buffer layers
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPE
- Study of Electronic Properties by Persistent Photoconductivity Measurement in Ga_xIn_N_yAs_ Grown by MOCVD
- On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
- Effect of Load Deflection on Corrosion Behavior of NiTi Wire
- High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)
- The novel method to improve electrical characteristics of p-type GaN by using Ni catalysis
- Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures
- High Brightness Green Light Emitting Diode with Charge Asymmetric Resonance Tunneling Structure
- Inverted GaN p-i-n photodiodes with a buried p^+/n^ tunneling junction
- InGaN/GaN MQD P-N Junction Photodiodes
- A Tristate Switch Using Triangular Barriers
- Study on the Level Structure of ^Cd Populated by the Beta Decay of ^Ag
- Low Temperature Growth C-54 TiSi_2 by Plasma Enhanced Chemical Vapor Deposition of Titanium on (001)Si
- Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate
- Characterization of the ZnO metal-semiconductor-metal ultraviolet photodetectors with Au contact electrodes
- Phosphorus Implantation Effects in Mg Doped GaN Epilayers
- P-type doping for Be/C co-implantation in GaN
- Highly strained oxide confined InGaAs VCSELs emitting in the 1.3im regions
- Characteristics of Thin-Film-Transistors Based on Zn-In-Sn-O Thin Films Prepared by Co-Sputtering System
- Monte Carlo Simulation of Optical Properties of Phosphor-Screened Ultraviolet Light in a White Light-Emitting Device
- In_Ga_As/InP Modulation-Doped Heterostructures Grown by Liquid-Phase Epitaxy
- Nitride-based light emitting diodes with nanostructured silicon contact layers
- Numerical Study of Three-Dimensional Photonic Crystals with Large Band Gaps (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Study of Electronic Properties by Persistent Photoconductivity Measurement in GaxIn1-xNyAs1-y Grown by MOCVD
- Growth of Nanopucks on Pb Quantum Islands
- The Effects of Crystallization on Mechanical Mechanism and Residual Stress of Sputtered Ag Thin Films
- Fatigue Crack Growth Characteristics of a Ti-15V-3Cr-3Sn-3Al Alloy with Variously Aged Conditions