GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
-
YU C.
Institute of Electro-Optical Engineering, Nation Ciao-Tong University
-
Wang Y.
Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University
-
Lee K.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Wang Y.
Institute Of Microelectronics
-
Lee K.
Institute Of Materials Research And Engineering
-
CHANG P.
Department of Electronic Engineering, Nan Jeon Institute of Technology
-
Yu C.
Institute Of Electro-optical Engineering Nation Ciao-tong University
-
Wang Y.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Chang P.
Department Of Electronic Engineering Nan Jeon Institute Of Technology
-
Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Yu C.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Wang Y.
Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National
-
Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
関連論文
- Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method
- High Reliable Nitride Based LEDs with Internal ESD Protection
- Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
- Nitride-based p-i-n Photodetectors with ITO p-contacts
- Nitride based Power Chip with ITO p-Contact and Al back-side Reflector
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
- Observation of large spectral blue-shift in photoluminescence spectra of Mg-doped gallium nitride Nanorods
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Band Structure of Surface Terminated Silicon Nanowire
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag