GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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YU C.
Institute of Electro-Optical Engineering, Nation Ciao-Tong University
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Wang Y.
Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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Lee K.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Wang Y.
Institute Of Microelectronics
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Lee K.
Institute Of Materials Research And Engineering
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CHANG P.
Department of Electronic Engineering, Nan Jeon Institute of Technology
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Yu C.
Institute Of Electro-optical Engineering Nation Ciao-tong University
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Wang Y.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chang P.
Department Of Electronic Engineering Nan Jeon Institute Of Technology
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Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Yu C.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Wang Y.
Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National
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Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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