S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate

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概要

• 論文の詳細を見る

• A high performance S-band power amplifier fabricated on a low cost 20-mil thick FR4 substrate is demonstrated. The amplifier consists of a single-ended driver amplifier and a balanced output power amplifier by utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. The S-band power amplifier with 38 dBm output power, 25.6% power-added efficiency (PAE), 3.9 dB noise figure and 22 dB small-signal gain is reported. In addition, excellent linearity with 48.25 dBm third-order intercept point is achieved.

• 社団法人電子情報通信学会の論文
• 2002-06-25

著者

• Wu W.

  Transcom, Inc.

• Wang Y.h.

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University Ta

• Liu H.Z.

  Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University

• Hsu C.C.

  Transcom, Inc. Tainan

• Chang C.H.

  Transcom, Inc. Tainan

• Wu C.L.

  Transcom, Inc. Tainan

• Chang C.S.

  Transcom, Inc. Tainan

• Wu C.l.

  Transcom Inc. Tainan

• Liu H.z.

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University Ta

• Liu H.

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University

• Hsu C.c.

  Transcom Inc. Tainan

• Chang C.h.

  Transcom Inc. Tainan

• Wang Y.

  Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National

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