Gd doping improved resistive switching characteristics of TiO_2-based resistive memory devices

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Wang Y.

  Institute Of Microelectronics

• KANG J.

  Institute of Microelectronics, Peking University

• Zhang X.

  Institute Of Dermatology Department Of Dermatology At First Hospital Anhui Medical University

• LIU X.

  Institute of Microelectronics, Peking University

• Han R.

  Institute Of Microelectronics Peking University

• LIU L.

  Institute of Microelectronics, Peking University

• TANG H.

  Institute of Microelectronics, Peking University

• XU N.

  Institute of Microelectronics, Peking University

• Kang J.

  Institute Of Microelectronics Peking University

• Liu X.

  Institute Of Microelectronics Peking University

• Wang Y.

  Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National

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