S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
スポンサーリンク
概要
- 論文の詳細を見る
A high performance S-band power amplifier fabricated on a low cost 20-mil thick FR4 substrate is demonstrated. The amplifier consists of a single-ended driver amplifier and a balanced output power amplifier by utilizing Wilkinson power dividers/combiners with quarter-wave transmission lines. The S-band power amplifier with 38 dBm output power, 25.6% power-added efficiency (PAE), 3.9 dB noise figure and 22 dB small-signal gain is reported. In addition, excellent linearity with 48.25 dBm third-order intercept point is achieved.
- 社団法人電子情報通信学会の論文
- 2002-06-25
著者
-
Chang C.
Transcom Inc.
-
Liu H.
Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University
-
Wang Y.
Institute of microelectronics, Department of Electrical Engineering, National Cheng-Kung University
-
Hsu C.
Transcom, Inc.
-
Wu W.
Transcom, Inc.
-
Wu C.
Transcom, Inc.
-
Wang Y.
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
-
Wang Y.
Institute Of Microelectronics
-
Wu C.
Transcom Inc.
-
Liu H.
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
-
Hsu C.
Transcom Inc.
-
Wang Y.
Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National
関連論文
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Band Structure of Surface Terminated Silicon Nanowire
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO_2 CMOS Devices
- Doping Effect of PtCu/Co and PtAl/Co Multilayers
- On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
- Memory Effect of Device Based on a Conjugated Donor-Acceptor Copolymer
- Martensitic/Ferritic Super Heat-resistant 650℃ Steels-Design and Testing of Model Alloys
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Evaluations of Scaling Properties for GOI MOSFETs in Nano-Scale
- Gd doping improved resistive switching characteristics of TiO_2-based resistive memory devices
- Preparation of Thick Americium Targets and Synthesis of ^Db
- Research on the Satellite On-Orbit Self-Servicing Testbed
- Grain Size Dependence of Yield Strength in Randomly Textured Mg-Al-Zn Alloy
- Texture Characteristics and Anisotropic Superplasticity of AZ61 Magnesium Alloy
- The Characteristics of Distribution of Craters on the Surface of Several Metal Irradiated by IPIB