The Characteristics of Distribution of Craters on the Surface of Several Metal Irradiated by IPIB
スポンサーリンク
概要
- 論文の詳細を見る
The bombardment of intense pulsed ion beam has been shown leading many physical and chemical effects. As a flash heating source, it produced a fast heating and cooling process in the region near the surface of target. Besides the evidence of formation of amorphous layer and phase transformation, there were many craters of various kinds found on the surface of target.In this paper, we studied the distributions of these craters according to the beam parameters such as ion energy (accelerating voltage), beam current density, pulse number, etc.. These beam parameters are 250 keV of ion energy, 72∼200 A/cm<SUP>2</SUP> of beam current density, 60 ns of pulse duration and 2∼24 of pulse number, respectively. The surface morphology was observed with SEM and the compositions were determined by EDS methods. Also statistical comparisons of crater distributions at different beam parameters were given in the paper. Through our experiments and analysis, we obtained that there are several kinds of craters appeared in our experiment. The size and number of crater varies according the beam parameters. The discussion about the reason of formation of those craters was also given in this paper. And the main factors to form craters on melted surface were the surface energy state distributions and eroded particles from ion sources.
- 一般社団法人 表面技術協会の論文
- 2003-11-01
著者
-
Zhao W.
Institute Of Heavy Ion Physics Peking University
-
Wang Y.
Institute Of Materials Science And Engineering ; Center For Nanoscience And Nanotechnology National
-
LE X.
Institute of Heavy Ion Physics, Peking University
-
YAN S.
Institute of Heavy Ion Physics, Peking University
-
HAN B.
Institute of Heavy Ion Physics, Peking University
-
XUE J.
Institute of Heavy Ion Physics, Peking University
関連論文
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Band Structure of Surface Terminated Silicon Nanowire
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO_2 CMOS Devices
- Doping Effect of PtCu/Co and PtAl/Co Multilayers
- On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
- Memory Effect of Device Based on a Conjugated Donor-Acceptor Copolymer
- Martensitic/Ferritic Super Heat-resistant 650℃ Steels-Design and Testing of Model Alloys
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Evaluations of Scaling Properties for GOI MOSFETs in Nano-Scale
- Gd doping improved resistive switching characteristics of TiO_2-based resistive memory devices
- Grain Size Dependence of Yield Strength in Randomly Textured Mg-Al-Zn Alloy
- Texture Characteristics and Anisotropic Superplasticity of AZ61 Magnesium Alloy
- The Characteristics of Distribution of Craters on the Surface of Several Metal Irradiated by IPIB