Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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YEO Yee-Chia
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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CHI D.
Institute of Materials Research & Engineering
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Lee K.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Lee K.
Institute Of Materials Research And Engineering
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Yeo Yee-chia
Silicon Nano Device Lab Dept Of Electrical And Computer Engineering National University Of Singapore
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Lee Rinus
Institute Of Materials Research And Engineering
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LIEW S.
Institute of Materials Research and Engineering
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BALAKRISNAN B.
Institute of Materials Research and Engineering
関連論文
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- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
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- Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
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- Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime