Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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WANG Grace
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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TOH Eng-Huat
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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HOE Keat-Mun
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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TRIPATHY S.
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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BALAKUMAR S.
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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LO Guo-Qiang
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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SAMUDRA Ganesh
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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YEO Yee-Chia
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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Samudra Ganesh
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Lo Guo-qiang
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Wang Grace
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Tripathy S.
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Hoe Keat-mun
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Balakumar S.
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Toh Eng-huat
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Lo Guo-qiang
Agency For Science Technology And Research Institute Of Microelectronics
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Yeo Yee-chia
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Wang Grace
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Toh Eng-Huat
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
関連論文
- Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
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- Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Double-Spacer Impact-ionization MOS Transistor : Characterization and Analysis
- Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation
- Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
- Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime