Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Samudra Ganesh
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Yeo Yee-chia
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Yeo Yee-chia
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Chan Lap
Silicon Nano Device Lab Dept. Of Electrical And Computer Engineering National University Of Singapor
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WONG Hoong-Shing
Silicon Nano Device Lab., Department of Electrical and Computer Engineering, National University of
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Yeo Yee-chia
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Wong Hoong-shing
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Yeo Yee-chia
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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- Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation
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