Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
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概要
- 論文の詳細を見る
In this paper, nickel–aluminum (Ni1-xAlx) alloys were employed for Al incorporation in nickel silicide (NiSi) and nickel germanide (NiGe) metal gates [denoted by Ni(Al)Si and Ni(Al)Ge, respectively] to achieve n-channel metal–oxide–semiconductor (NMOS) work function $\Phi_{\text{m}}$ tunability. A higher annealing temperature during gate formation was found to increase Al concentration at the gate/dielectric interface. The presence of low $\Phi_{\text{m}}$ Al at the gate/dielectric interface reduces the NiSi and NiGe $\Phi_{\text{m}}$ by ${\sim}0.2$ and ${\sim}0.6$ eV, respectively. However, the saturation in both Ni(Al)Si and Ni(Al)Ge gate $\Phi_{\text{m}}$ at ${\sim}4.4$ eV is due to Fermi-pinning from the formation of interfacial Al2O3 which prevented a further lowering in $\Phi_{\text{m}}$ to that of pure Al (${\sim}4.1$–4.3 eV).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Lee Rinus
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Koh Alvin
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Lim Andy
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Lim Andy
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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Kwong Dim-Lee
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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Koh Alvin
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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