Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
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概要
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We report the impact of pulsed laser annealing on the relaxation of strain in SiGe-on-insulator (SGOI) substrates formed by Ge condensation. Ge condensation process results in a partially strained SiGe layer, whose mechanism of stress release is governed by the onset of defects formation. The strain developed in the SiGe layer as condensation proceeds is systematically studied, to identify the critical phase where defects form. The SGOI layer is then irradiated with an excimer laser. The laser annealing repairs any existing defects and relaxes the compressive strain in the crystalline SiGe layer to $-0.28$% when irradiated with an optimized laser fluence of 450 mJ/cm2 for seven consecutive pulses. Spectroscopic ellipsometry and atomic force microscopy (AFM) measurements of the laser-annealed surface revealed the excellent crystallinity and improved surface roughness (${\sim}0.42$ nm). Etch pit density measurements revealed a threading dislocation density of about $4\times 10^{5}$ cm-2. A clear understanding of the correlation between strain evolution with excimer laser energy density and pulse number enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering for application in high mobility metal oxide semiconductor field effect transistors (MOSFETs).
- 2008-04-25
著者
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Hoe Keat-mun
Institute Of Microelectronics (ime)
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Wang Grace
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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WANG Xincai
Singapore Institute of Manufacturing Technology (SIMTECH)
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Toh Eng-huat
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-Chia
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Tripathy Sudhinranjan
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Wang Grace
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Toh Eng-Huat
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Hoe Keat-Mun
Institute of Microelectronics, 11 Science Park Road, Singapore 117685
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Samudra Ganesh
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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