Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high $I_{\text{on}}/I_{\text{off}}$ ratio of ${\sim}10^{5}$, high drive current of ${\sim}900$ μA/μm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height ($\Phi_{\text{beff}}$) modulation was also studied.
- 2008-04-25
著者
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Lo Guo-Qiang
Institute of Microelectronics
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SINGH Navab
Institute of Microelectronics
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Hoe Keat-mun
Institute Of Microelectronics (ime)
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Cui Guang
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
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Chin Yoke
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
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Chi Dong-Zhi
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
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Lo Guo-Qiang
Institute of Microelectronics, Science Park II, Singapore 117685
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Tan Eu
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
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Pey Kin
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
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Lee Pooi
School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
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Chi Dong-Zhi
Institute of Materials Research Engineering, 3 Research Link, Singapore 117602
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