Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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SAMUDRA Ganesh
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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YEO Yee-Chia
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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Lim Andy
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Samudra Ganesh
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
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Lo Guo-qiang
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Hoe Keat-mun
Institute Of Microelectronics (ime)
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Yeo Yee-chia
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Yeo Yee-chia
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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ZHU Ming
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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LEE Rinus
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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TAN Kian-Ming
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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LIOW Tsung-Yang
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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CHEN Xu-Chu
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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KOH Alvin
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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HOE Keat
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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CHOW Shue-Yin
Agency for Science Technology and Research, Institute of Materials Research and Engineering
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LO Guo-Qiang
Agency for Science Technology and Research, Institute of Microelectronics
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CHI Dong-Zhi
Agency for Science Technology and Research, Institute of Materials Research and Engineering
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Zhu Ming
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Lee Rinus
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Koh Alvin
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Koh Alvin
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Chen Xu-chu
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Chi Dong
Agency For Science Technology And Research Institute Of Materials Research And Engineering
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Chow Shue-yin
Agency For Science Technology And Research Institute Of Materials Research And Engineering
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Tan Kian-ming
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Liow Tsung-yang
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Lo Guo-qiang
Agency For Science Technology And Research Institute Of Microelectronics
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Lim Andy
Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa
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Samudra Ganesh
Silicon Nano Device Lab. Department Of Electrical And Computer Engineering National University Of Si
関連論文
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- N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts
- Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors
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- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
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- Thermal Stability of Metal Gate Work Functions
- Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
- Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Pulsed Laser Irradiation of Silicon-Germanium-on-Insulator (Si_Ge_OI) Substrates for Strain Relaxation and Defect Reduction
- Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Double-Spacer Impact-ionization MOS Transistor : Characterization and Analysis
- Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation
- Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
- Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors
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- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime