Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

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概要

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• Strained p-channel tri-gate fin-type field-effect transistor (FinFET) with extended-Pi ($e\Pi$) shaped SiGe source/drain (S/D) is demonstrated with enhanced drive current performance of 33% at a fixed drain induced barrier lowering (DIBL) over FinFET with $\Pi$-SiGe S/D. The $e\Pi$ S/D stressor structure can be easily formed by simply using a longer HF cleaning time prior to the growth of SiGe in the S/D regions. The longer HF cleaning step created a recess into the buried oxide which allows SiGe to be grown below the base of the Si fin at the S/D regions, providing additional strain to the channel. Enhancement of device performance was also found to increase with the decrease of fin width and this benefit aggressively scaled tri-gate FinFET for advance technology node.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• BALASUBRAMANIAN N.

  Institute of Microelectronics

• Hoe Keat-mun

  Institute Of Microelectronics (ime)

• Yeo Yee-chia

  Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore

• TUNG Chih-Hang

  Institute of Microelectronics

• Zhu Ming

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Lee Rinus

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Samudra Ganesh

  Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)

• Tan Kian-ming

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Liow Tsung-yang

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Yeo Yee-Chia

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Hoe Keat-Mun

  Institute of Microelectronics, 11 Science Park Road, 117685 Singapore

• Liow Tsung-Yang

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Tan Kian-Ming

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Lee Rinus

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Tung Chih-Hang

  Institute of Microelectronics, 11 Science Park Road, 117685 Singapore

• Zhu Ming

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

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