Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Agarwal A.
Institute Of Microelectronics
-
BALASUBRAMANIAN N.
Institute of Microelectronics
-
KWONG D.
Institute of Microelectronics
-
KWONG D.-L.
Institute of Microelectronics
-
KUMAR R.
Institute of Microelectronics
-
TUNG C.
Institute of Microelectronics
-
AGARWAL Ajay
Institute of Microelectronics
-
LIOW Tsung-Yang
Institute of Microelectronics
-
KWONG D-L
Institute of Microelectronics
関連論文
- Bendable High-Performance Electronic Devices (Active Transistor, High-Density Interconnect and Passive-MIM Capacitors) on Flexible Organic-Substrate
- Ultra-Narrow Silicon Nanowire (-3nm) Gate-All-Around MOSFETs
- Overcoming Challenges in Metal Gate Etching for Sub-45nm Technology Node
- Creation of Strained and Relaxed SiGe films simultaneously through Ge condensation on SOI
- Fully-depleted ultra narrow (-10nm) body Gate-All-Around CMOS transistors
- Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
- Strained Ge-rich SiGe Nanowire pFETs with High-κ/Metal Gate Fabricated using Germanium Condensation Technique
- Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications
- Impacts of Body Contact Structures on SOI NMOSFET DC, RF, and 1/f Noise Characteristics
- Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation
- Growth and Characterization of Germanium on Insulator (GOI) from Sputtered Ge by Novel Single and Dual Necking techniques
- A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
- Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
- Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology
- Visible Light Emission from Controlled α-Si/SiN Multi-layer Structures
- Sub-30nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain Stressors
- Practical Solutions to Enhance EWF Tunability of Ni FUSI Gates on HfO_2
- Highly Manufacturable CMOSFETs with Single High-k (HfLaO) and Dual Metal Gate Integration Process
- CMOS Compatible Si-Nanowire Inverter Logic Gate for Low Power Applications
- Device Performance and Reliability Considerations of Biaxially Strained Si by Wafer-Bonding-Technology
- Electrical Sensing of Calcium Ions using Silicon Nanowire Array
- A Novel Approach to Fabricate-120nm Thick Fully Relaxed Ge-on-Insulator
- A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO_2 CMOS Devices
- MOVPE Prepared ZnO/Si Heterojunction Diodes with Dual Functions : Light-Emission and UV Photo-Detection
- Memory Effect of Device Based on a Conjugated Donor-Acceptor Copolymer
- High quality Si_Ge_x nanowire and its application to MOSFET integrated with HfO_2/TaN/Ta gate stack
- Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer
- Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
- Modeling and Characterization of the On-chip Interconnects
- Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress
- Label Free Electrical Detection of Single Nucleotide Polymorphisms using Nanowire Biosensors
- Current Status of Fast Ignition Related Experiments and the Prospect
- C-3-48 消光比10dBを有する10G用MZ型シリコン光変調器(シリコンフォトニクス,C-3.光エレクトロニクス,一般セッション)
- C-3-58 シリコンMZ変調器による20Gbps二値位相変調(C-3.光エレクトロニクス,一般セッション)
- C-3-41 20-32Gbps低損失MZシリコン変調器(C-3.光エレクトロニクス,一般セッション)
- 10Gbps高消光比MZ型シリコン光変調器(光パッシブコンポネント(フィルタ、コネクタ、MEMS)、シリコンフォトニクス、光ファイバ、一般)
- Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- 10Gbps高消光比MZ型シリコン光変調器
- Silicon Mach-Zehnder modulator using low-loss phase shifter with bottom PN junction formed by restricted-depth doping
- Characterization of Silicon Mach-Zehnder Modulator in 20-Gbps NRZ-BPSK Transmission
- シリコンマッハ-ツェンダ変調器による10Gb/s 80km光ファイバ伝送(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))
- シリコンマッハ-ツェンダ変調器による10Gb/s 80km光ファイバ伝送(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))
- シリコンマッハ-ツェンダ変調器による10Gb/s 80km光ファイバ伝送(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))