Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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TUNG C.
Institute of Microelectronics
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Ling C.
National University Of Singapore Department Of Electrical And Computer Engineering
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PHUA T.
National University of Singapore, Department of Electrical and Computer Engineering
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ANG D.
Nanyang Technological University, School of Electrical and Electronic Engineering
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Phua T.
National University Of Singapore Department Of Electrical And Computer Engineering
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Ang D.
Nanyang Technological University School Of Electrical And Electronic Engineering
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- A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers
- CMOS Compatible Si-Nanowire Inverter Logic Gate for Low Power Applications
- A Novel Approach to Fabricate-120nm Thick Fully Relaxed Ge-on-Insulator
- Self-Heating Induced Germanium Outdiffusion and Non-Local Channel Degradation in the Strained-Si/SiGe N-MOSFET subjected to Channel Hot-Electron Stress