A Novel Approach to Fabricate-120nm Thick Fully Relaxed Ge-on-Insulator
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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LO G.
Institute of Microelectronics
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BALASUBRAMANIAN N.
Institute of Microelectronics
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KWONG D.
Institute of Microelectronics
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KWONG D.-L.
Institute of Microelectronics
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TUNG C.
Institute of Microelectronics
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BALAKUMAR S.
Institute of Microelectronics
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TRIPATHY S.
Institute of Materials Research Engineering
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FOO Y.
Institute of Materials Research Engineering
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Tripathy S.
Institute Of Materials Research And Engineering
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KWONG D-L
Institute of Microelectronics
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HOE K.
Institute of Microelectronics
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TANG W.
Institute of Microelectronics
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Foo Y.
Institute Of Materials Research And Engineering
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