Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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LEE S.
Silicon Nano Device Lab., National University of Singapore
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KWONG D.-L.
Institute of Microelectronics
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CHI D.
Institute of Materials Research & Engineering
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Lee S.
Silicon Nano Device Lab Department Of Ece National University Of Singapore
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LI Rui
Silicon Nano Device Lab, Department of ECE, National University of Singapore
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HONG M.
Laser Microprocessing Lab, Department of Electrical and Computer Engineering, National University of
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Li Rui
Silicon Nano Device Lab Department Of Ece National University Of Singapore
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