Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO_2/TaN gate on Strained Si-SiGe channel
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kwong Dim-Lee
Institute of Microelectronics
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Lo Guo-Qiang
Institute of Microelectronics
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Bera L.
Institute Of Microelectronics
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LOH Wei-Yip
Institute of Microelectronics
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CHEN YiXuan
Institute of Microelectronics
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LEE S.
Silicon Nano Device Lab., National University of Singapore
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YANG Rong
Institute of Microelectronics
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Lee S.
Silicon Nano Device Lab Department Of Ece National University Of Singapore
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Lee S.
Silicon Nano Device Lab. National University Of Singapore
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