Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications

スポンサーリンク

概要

論文の詳細を見る
2007-09-19

著者

関連論文

Dopant Segregated Pt-Germanide Schottky S/D p-MOSFET with HfO_2/TaN gate on Strained Si-SiGe channel
Formation and Thermal Stability of Nickel Germanide on Germanium Substrate
Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
Bendable High-Performance Electronic Devices (Active Transistor, High-Density Interconnect and Passive-MIM Capacitors) on Flexible Organic-Substrate
Ultra-Narrow Silicon Nanowire (-3nm) Gate-All-Around MOSFETs
Overcoming Challenges in Metal Gate Etching for Sub-45nm Technology Node
Creation of Strained and Relaxed SiGe films simultaneously through Ge condensation on SOI
Fully-depleted ultra narrow (-10nm) body Gate-All-Around CMOS transistors
Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process
Strained Ge-rich SiGe Nanowire pFETs with High-κ/Metal Gate Fabricated using Germanium Condensation Technique
Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications
Impacts of Body Contact Structures on SOI NMOSFET DC, RF, and 1/f Noise Characteristics
Transport and Back-Gated Field Effect Characteristics of Si Nanowires Formed by Stress-Limited Oxidation
Growth and Characterization of Germanium on Insulator (GOI) from Sputtered Ge by Novel Single and Dual Necking techniques
A Novel Approach to fabricate High Ge content SiGe on Insulator from Amorphous SiGe deposited on SOI wafers
Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology
Visible Light Emission from Controlled α-Si/SiN Multi-layer Structures
Sub-30nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain Stressors
Practical Solutions to Enhance EWF Tunability of Ni FUSI Gates on HfO_2
Highly Manufacturable CMOSFETs with Single High-k (HfLaO) and Dual Metal Gate Integration Process
CMOS Compatible Si-Nanowire Inverter Logic Gate for Low Power Applications
Device Performance and Reliability Considerations of Biaxially Strained Si by Wafer-Bonding-Technology
Electrical Sensing of Calcium Ions using Silicon Nanowire Array
A Novel Approach to Fabricate-120nm Thick Fully Relaxed Ge-on-Insulator
A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO_2 CMOS Devices
The Electrical and Material Properties of HfO_xN_y Dielectric on Germanium Substrate
Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
MOVPE Prepared ZnO/Si Heterojunction Diodes with Dual Functions : Light-Emission and UV Photo-Detection
Enhanced Thermal Stability of Nickel Germanide with Ultrathin Ti Layer
Pt-germanide Formed by Laser Annealing and Its Application for Schottky Source/Drain MOSFET Integrated with TaN/CVD-HfO_2/Ge Gate Stack
Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric
Label Free Electrical Detection of Single Nucleotide Polymorphisms using Nanowire Biosensors
Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon
Silicon Nanowire Schottky Barrier NMOS Transistors
Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
Mechanism of Semiconductor Opening Switch
Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate
Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
Formation and Thermal Stability of Nickel Germanide on Germanium Substrate

もっと見る

スポンサーリンク