The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate

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概要

• 論文の詳細を見る

• Hafnium oxynitride (HfOxNy) film was investigated as a possible gate dielectric of germanium metal–oxide–semiconductor (MOS) device. The thin HfOxNy dielectric was prepared using reactive sputtering, followed by post deposition annealing (PDA). The dependence of the equivalent oxide thickness (EOT) on PDA condition was investigated. A small EOT of 19.7 Å with a low leakage current of $3.1\times 10^{-5}$ A/cm2 ($V_{\text{g}}=1$ V) was achieved with PDA at 600°C. In addition, the material properties of HfOxNy on germanium were analyzed by X-ray photoelectron spectroscopy. The nitrogen is found to pile up at the dielectric/substrate interface and to form Ge-N bonds, which contribute to the interfacial layer (IL) suppression.

• Japan Society of Applied Physicsの論文
• 2004-09-15

著者

• Wu Nan

  Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University

• Zhu Chunxiang

  Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University

• Zhang Qingchun

  Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin

• Zhu Chunxiang

  Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent 119260, Singapore

• Zhang Qingchun

  Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent 119260, Singapore

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