Formation and Thermal Stability of Nickel Germanide on Germanium Substrate
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概要
- 論文の詳細を見る
The formation and thermal stability of nickel germanide on germanium substrate were examined by both electrical and physical characterization methods. Low resistivity (14 μ$\Omega$ cm) mono-nickel–germanide was formed at a low temperature of 400°C on Ge substrate. The sheet resistance of nickel germanide changed with the germanide formation temperatures and had a similar characteristic as nickel silicide. However, the thermal stability study shows that NiGe formed on Ge substrate has a poorer thermal stability than NiSi on Si substrate, which is due to the lower activation energy of agglomeration in NiGe ($2.2\pm 0.2$ eV) compared to NiSi.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-10-10
著者
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Bera Lakshmi
Institute Of Microelectronics
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Wu Nan
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhang Qingchun
Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin
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Osipowicz Thomas
Department Of Physics Faculty Of Science National University Of Singapore
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Zhu Chunxiang
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Bera Lakshmi
Institute of Microelectronics, Singapore 117685
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Osipowicz Thomas
Department of Physics, Faculty of Science, National University of Singapore, 10 Kent Ridge, Singapore 119260
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Wu Nan
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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