Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
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概要
- 論文の詳細を見る
The electrical properties of Hf–Al–O alloy films with various composition ratios prepared by atomic layer chemical vapor deposition (ALCVD) have been investigated to find the optimum composition ratio. The Hf–Al–O alloy with 67% composition of HfO2, (HfO2)0.67(Al2O3)0.33, shows a good thermal stability comparable to Al2O3 film and a lower amount of negative fixed charge similar to pure HfO2 film. A significant reduction in leakage current of 67%-HfO2 film compared to that of pure HfO2 film has been achieved, which is attributed to the improved thermal stability. From the results, it is found that the optimum composition ratio in Hf–Al–O alloy lies at around 60–70% of HfO2.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-01
著者
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Joo Moon
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Cho Byung
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Kwong Dim-lee
Department Of Ece The University Of Texas
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Balasubramanian Narayanan
Institute Of Microelectronics
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Li Ming
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Wu Nan
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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YU Hongyu
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National Universi
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Yeo Chia
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Balasubramanian Narayanan
Institute of Microelectronics, 11 Science Park Road, 117685 Singapore
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Kwong Dim-Lee
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78752, U.S.A.
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Zhu Chunxiang
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
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Joo Moon
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
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Yeo Chia
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
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Li Ming
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
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Cho Byung
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, 119260 Singapore
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