Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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YEO Yee-Chia
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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ZHU Chunxiang
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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Kwong D.
Dept. Electrical And Computer Engineering University Of Texas
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Chin Albert
Dept Electronics Eng. National Chiao Tung Univ.
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SHEN Chen
Silicon Nano Device Lab, Dept. of ECE, National University of Singapore (NUS)
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Li M.
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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LOW Tony
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore
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HOU Y.
Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore
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CHAN L.
Technology Development, Chartered Semiconductor Manufacturing
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Low Tony
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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Shen Chen
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
関連論文
- Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate
- Germanium Out-Diffusion in HfO_2 and its Impact on Electrical Properties
- Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
- N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts
- Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors
- Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
- Strained N-channel FinFETs with High-stress Nickel Silicide-Carbon Contacts and Integration with FUSI Metal Gate Technology
- A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications
- A Physics-based Compact Model for I-MOS Transistors
- Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
- Sub-30nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain Stressors
- The Electrical and Material Properties of HfO_xN_y Dielectric on Germanium Substrate
- Thermal Stability of Metal Gate Work Functions
- Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
- Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric
- Pulsed Laser Irradiation of Silicon-Germanium-on-Insulator (Si_Ge_OI) Substrates for Strain Relaxation and Defect Reduction
- Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Double-Spacer Impact-ionization MOS Transistor : Characterization and Analysis
- Schottky Barrier Height Modulation for Nickel Silicide on n-Si (100) using Antimony (Sb) Segregation
- A Physical Model for Hole Direct Tunneling Currents Through Ultrathin Gate Dielectrics in Advanced CMOS Devices
- Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
- Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- The Electrical and Material Properties of HfOxNy Dielectric on Germanium Substrate
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement
- Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
- Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
- Formation and Thermal Stability of Nickel Germanide on Germanium Substrate