Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors

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概要

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• Strained p-channel fin-type field-effect transistors (FinFETs) with SiGe source and drain (S/D) regions formed by a Ge condensation process is demonstrated. SiGe epitaxial layer was grown on the sidewalls at the S/D regions after a successful removal of both the polysilicon gate and nitride spacer stringer. Condensation of the SiGe at the S/D region was subsequently performed. The novel local Ge condensation not only drives Ge into the Si fin and/or increases the Ge concentration in the S/D regions for enhanced strain effects, but also eliminates the need for S/D recess etch, leading to process simplicity. Compared to a FinFET with uncondensed Si1-xGex S/D, FinFETs with condensed Si1-yGey S/D exhibit 28% higher drive current. Devices with gate lengths down to 26 nm were demonstrated with excellent control of short-channel effects.

• 2007-04-30

著者

• BALASUBRAMANIAN N.

  Institute of Microelectronics

• Yoo Won-jong

  Silicon Nano Device Lab. Dept Of Electrical And Computer Engineering National University Of Singapor

• Yeo Yee-chia

  Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore

• TUNG Chih-Hang

  Institute of Microelectronics

• Lee Rinus

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Chui King-jien

  Silicon Nano Device Lab. Dept Of Electrical And Computer Engineering National University Of Singapor

• Samudra Ganesh

  Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)

• Tan Kian-ming

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Liow Tsung-yang

  Silicon Nano Device Lab. Dept. Of Electrical & Computer Engineering National University Of Singa

• Yoo Won-Jong

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Chui King-Jien

  Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore

• Balasubramanian N.

  Institute of Microelectronics, 11 Science Park Road, 117685 Singapore

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