Mechanism and Prevention of Spontaneous Tin Whisker Growth
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2005-11-20
著者
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TUNG Chih-Hang
Institute of Microelectronics
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Suh Jong-ook
Department Of Materials Science And Engineering University Of California At Los Angeles
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TU King-Ning
Department of Materials Science and Engineering, University of California at Los Angeles
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WU Albert
Department of Materials and Mineral Resources Engineering, National Taipei University of Technology
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TAMURA Nobumichi
Advanced Light Source, Lawrence Berkeley National Laboratory
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Wu Albert
Department Of Materials And Mineral Resources Engineering National Taipei University Of Technology
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Tu King-ning
Department Of Materials Science And Engineering University Of California At Los Angeles
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Tamura Nobumichi
Advanced Light Source Lawrence Berkeley National Laboratory
関連論文
- Novel Extended-Pi Shaped Silicon-Germanium (eII-SiGe) Source/Drain Stressors for Strain and Performance Enhancement in P-Channel FinFETs
- Sub-30nm Strained P-Channel FinFETs with Condensed SiGe Source/Drain Stressors
- Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement
- Concept of Strain-Transfer-Layer and Integration with Graded Silicon–Germanium Source/Drain Stressors for p-Type Field Effect Transistor Performance Enhancement
- Mechanism and Prevention of Spontaneous Tin Whisker Growth
- Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors
- Analysis of Chlorine Ions in Antimony-Doped Tin Oxide Thin Film Using Synchrotron Grazing Incidence X-ray Diffraction (Special Issue : Photovoltaic Science and Engineering)
- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement