Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
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概要
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A novel double-gate (DG) tunneling field-effect transistor (TFET) with silicon–germanium (SiGe) Source is proposed to overcome the scaling limits of complementary metal–oxide–semiconductor (CMOS) technology and further extends Moore’s law. The narrower bandgap of the SiGe source helps to reduce the tunneling width and improves the subthreshold swing and on-state current. Less than 60 mV/decade subthreshold swing with extremely low off-state leakage current is achieved by optimizing the device parameters and Ge content in the source. For the first time, we show that such a technology proves to be viable to replace CMOS for high performance, low standby power, and low power technologies through the end of the roadmap with extensive simulations.
- 2008-04-25
著者
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Yeo Yee-chia
Silicon Nano Device Lab (sndl) Ece Department National University Of Singapore
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SYLVESTER Dennis
Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singa
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Heng Chun-huat
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Samudra Ganesh
Silicon Nano Device Lab Dept. Of Ece National University Of Singapore (nus)
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Toh Eng-huat
Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Chan Lap
Silicon Nano Device Lab Dept. Of Electrical And Computer Engineering National University Of Singapor
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Yeo Yee-Chia
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Wang Grace
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Wang Grace
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Toh Eng-Huat
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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Toh Eng-Huat
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Heng Chun-Huat
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Chan Lap
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Samudra Ganesh
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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Sylvester Dennis
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), Singapore 117576
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