Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-03-01
著者
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Cho B
National Univ. Singapore Sgp
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Cho Byung
Department Of Electrical And Computer Engineering National University Of Singapore
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Joo Moon
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Cho Byung
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Kwong Dim-lee
Department Of Electrical And Computer Engineering The University Of Texas
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Kwong Dim-lee
Department Of Ece The University Of Texas
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WU Nan
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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ZHU Chunxiang
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National Universi
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Balasubramanian Narayanan
Institute Of Microelectronics
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Li Ming
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Wu Nan
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Zhu Chunxiang
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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YEO Chia
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National Universi
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YU Hongyu
Silicon Nano Device Lab (SNDL), Department of Electrical and Computer Engineering, National Universi
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Yeo Chia
Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University
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Yu H
Univ. California Ca Usa
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