A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-01-15

著者

• ZHAO Rong

  Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• Lau W

  Lam Res. Corp. California Usa

• Zhao R

  Nus Singapore

• Chong T

  National Univ. Singapore Singapore

• Chong Tow

  Data Storage Institute

• Li M

  National Univ. Singapore Sgp

• ZHAO Rong

  Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• LAU Wai

  Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• CHONG Tow

  Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• LI Ming

  Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore

• Lau Wai

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Chong Tow

  Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Li Ming

  Silicon Nano Device Lab (sndl) Department Of Electrical And Computer Engineering National University

• Li Ming

  Center For Optoelectronics Department Of Electrical Engineering National University Of Singapore

• Chong Tow

  Data Storage Institute, DSI Building

関連論文

• Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
• The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
• On the Possibility of High Density Data Storage Based on Modulation-Doped Electron Trapping Materials
• The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
• A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
• Rewritable Dual-Layer Initialization-Free Phase-Change Optical Disk
• Optical Transition of Chalcogenide Phase-Change Thin Films
• Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
• A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
• A New Structure of Super-Resolution Near-Field Phase-Change Optical Disk with a Sb_2Te_3 Mask Layer
• Three-Dimensional Thermal Modelling and Analysis of Near-Field Phase Change Optical Disks
• Study of the Superlattice-Like Phase Change Optical Recording Disks
• Study of the Multi-Level Reflection Modulation Recording for Phase Change Optical Disks
• Thermal Modeling of Grooved Phase Change Optical Recording Disk
• Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer
• Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
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• Dependence of Chemical Composition Ratio on Electrical Properties of HfO_2-Al_2O_3 Gate Dielectric
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• Dependence of Chemical Composition Ratio on Electrical Properties of HfO2–Al2O3 Gate Dielectric
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