Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-02-15
著者
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Qian Peng
Department Of Electrical Engineering National University Of Singapore
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Lau W
Lam Res. Corp. California Usa
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Lau Wai
Department Of Electrical Engineering National University Of Singapore
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Sandler N
Lam Research Corporation Cvd Business Unit
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Lau Wai
Centre For Optoelectronics Department Of Electrical Engineering National University Of Singapore
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SANDLER Nathan
Lam Research Corporation, CVD Business Unit
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MCKINLEY Kevin
Lam Research Corporation, CVD Business Unit
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CHU Paul
Department of Physics and Materials Science, City University of Hong Kong
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Chu P
City Univ. Hong Kong Hong Kong Chn
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Chu Paul
Department Of Physics And Materials Science City University Of Hong Kong
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Mckinley Kevin
Lam Research Corporation Cvd Business Unit
関連論文
- Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
- The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique
- The Application of Semiconducting Low-Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates
- A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions
- Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
- A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
- Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer
- Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature
- Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling Probabilities
- The Development of a Highly Selective KI/I_2/H_2O/H_2SO_4 Etchant for the Selective Etching of Al_Ga_As over GaAs
- The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications
- The Identification and Suppression of Defects Responsible for Electrical Hysteresis in Metal-Nitride-Silicon Capacitors
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