Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-03-15
著者
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Kwong D‐l
Univ. Texas At Austin Tx Usa
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Kwong Dim-lee
Microelectronic Research Center The University Of Texas At Austin
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CHANG Ruey-Dar
Department of Electronic Engineering, Chang Gung University
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CHU Paul
Department of Physics and Materials Science, City University of Hong Kong
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Chu Paul
Department Of Physics And Materials Science City University Of Hong Kong
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Chang Ruey-dar
Department Of Electronic Engineering Chang Gung University
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CHOI Philip
Microelectronics Research Center, University of Texas at Austin
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GARDNER Mark
Advanced Micro Devices
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Choi Philip
Microelectronics Research Center University Of Texas At Austin
関連論文
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Evidence that N_2O is a Stronger Oxidizing Agent than O_2 for the Post-Deposition Annealing of Ta_2O_5 on Si Capacitors
- A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
- The Superiority of N_2O Plasma Annealing over O_2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta_2O_5) Films
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide
- Diffusion of Indium Implanted in Silicon Oxides
- Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon
- Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
- Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides
- Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C