Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-11-15
著者
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CHANG Ruey-Dar
Department of Electronic Engineering, Chang Gung University
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CHIANG Hsiao-Pai
National Nano Device Laboratories
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LIU Hsien-Wen
Nanya Technology Corporation
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HO Li-Wei
Department of Electronic Engineering, Chang Gung University
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CHIANG Po-Chen
Department of Electronic Engineering, Chang Gung University
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TSAI Jung-Ruey
Department of Electronic Engineering, Chang Gung University
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LIN Jengping
Department of Electronic Engineering, Chang Gung University
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Chiang Po-chen
Department Of Electronic Engineering Chang Gung University
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Lin Jengping
Department Of Electronic Engineering Chang Gung University
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Chang Ruey-dar
Department Of Electronic Engineering Chang Gung University
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Chang R‐d
Chang Gung Univ. Taoyuan Twn
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Tsai Jung-ruey
Department Of Electronic Engineering Chang Gung University
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Ho Li-wei
Department Of Electronic Engineering Chang Gung University
関連論文
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer
- Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide
- Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress
- Diffusion of Indium Implanted in Silicon Oxides
- Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon
- Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C