Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer

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概要

• 論文の詳細を見る

• A thin praseodymium interlayer with a thickness of less than 3.5 nm at the Al/GaAs Schottky junction is shown to reduce the reverse bias leakage current by more than two orders of magnitude and enhance the Schottky barrier height by 0.12 eV. The significant reduction of reverse bias leakage current cannot be explained by the barrier height enhancement alone. Formation of interfacial praseodymium oxide and gettering of n-type dopant in GaAs substrates by the praseodymium interlayer needs to be taken in to account to explain the results. Furthermore, it was found that the cut-in voltage of forward current increases significantly with the Pr oxidation time, which is very useful in the fabrication of enhancement-type transistors for high-speed integrated circuits.

• 社団法人応用物理学会の論文
• 1998-12-01

著者

• Chang Liann

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• LIN Jengping

  Department of Electronic Engineering, Chang Gung University

• Lin Jengping

  Department Of Electronic Engineering Chang Gung University

• HWU Ming-Jyh

  Department of Electrical Engineering, National Central University Jungli

• Hwu M‐j

  National Central Univ. Jungli Twn

• Hwu Ming-jyh

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

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