Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon

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概要

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• In this study, we examined the diffusion of boron near the projected ranges of high-dose 11B and BF2 ions implanted in silicon. A buried layer of 10B was formed and the redistribution of 10B was used to monitor the diffusion behavior. Boron precipitation at 850 °C produces the pileup of 10B in the peak region of 11B. The formation of a band of boron clusters was indicated by the accumulation of 10B between the projected range and the diffusion tail of the 11B profiles during annealing at 750 °C, following 11B+ implantation. The 10B redistribution at 750 °C also demonstrated the retardation of transient enhanced diffusion (TED) in the peak region. Under BF2+ implantation, TED retardation near the projected range of 11B is suppressed by the decrease in implantation energy, because the surface proximity effect reduces the density of end-of-range (EOR) defects at low implantation energies. Boron clustering is suppressed in front of the diffusion tail of 11B because only a peak of 10B at the EOR dislocations exists at 750 °C following BF2+ implantation.

• 2008-12-25

著者

• Chang Ruey-dar

  Department Of Electronic Engineering Chang Gung University

• Lin Chih-hung

  Department Of Computer Science And Engineering National Sun Yat-sen University

• Ho Li-wei

  Department Of Electronic Engineering Chang Gung University

• Lin Chih-Hung

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.

• Ho Li-Wei

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.

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