Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide
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概要
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In this study, we investigated how fluorine implantation affects the crystallization of amorphous silicon (a-Si) prepared by low-pressure chemical vapor deposition. Fluorine and silicon ions were implanted at the center of the a-Si and a-Si/SiO<sub>2</sub> interface to identify whether the effect is caused by implantation damage or fluorine incorporation into the thin film. Two-dimensional Monte-Carlo simulation was performed to clarify crystallization mechanisms. The microstructures obtained experimentally were reproduced by the simulation. Experimental and simulation results indicate that damage caused by fluorine implanted at the a-Si/SiO<sub>2</sub> interface increased the energy barrier to stable nuclei formation, causing a significant reduction in the nucleation rate. Fluorine incorporation into the a-Si film reduced the growth rate as fluorine was implanted at the film center.
- 2011-09-25
著者
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Chang Ruey-dar
Department Of Electronic Engineering Chang Gung University
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Chang Ruey-Dar
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 33302, Taiwan, R.O.C.
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Hsieh Fu-Han
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 33302, Taiwan, R.O.C.
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Wu Yeh-Wei
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 33302, Taiwan, R.O.C.
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Ma Chia-Chi
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 33302, Taiwan, R.O.C.
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Ma Chia-Chi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.
関連論文
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- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide
- Diffusion of Indium Implanted in Silicon Oxides
- Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon
- Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C