Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C

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概要

• 論文の詳細を見る

• The transient dose loss of phosphorus implanted in silicon was investigated at 800 °C at doses of $7\times 10^{13}$ and $2\times 10^{14}$ cm-2 at 50 keV. The percentage decrease in phosphorus dose and the degree of transient enhanced diffusion increase with implanted dose during the annealing after phosphorus implantation. Additional implantation of Si+ and annealing at 800 °C were performed to approach the limit of the dose loss. The maximum percentage dose loss decreases as the dose of implanted phosphorus increases because of segregation kinetics at the Si/SiO2 interface. The effect of arsenic background doping on phosphorus dose loss was also investigated. Phosphorus segregates rapidly at the interface because arsenic doping enhances diffusion. However, arsenic background doping reduces the maximum percentage dose loss of phosphorus.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-07-15

著者

• Chang Ruey-dar

  Department Of Electronic Engineering Chang Gung University

• Tsai Jung-ruey

  Department Of Electronic Engineering Chang Gung University

• Ho Li-wei

  Department Of Electronic Engineering Chang Gung University

• Tsai Jung-Ruey

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 333, Taiwan, R.O.C.

関連論文

• Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
• Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
• Experimental and Simulation Studies of Solid-Phase Crystallization of Fluorine-Implanted Amorphous Silicon on Silicon Dioxide
• Diffusion of Indium Implanted in Silicon Oxides
• Diffusion of Boron near Projected Ranges of B and BF2 Ions Implanted in Silicon
• Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C

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