Tsai Jung-ruey | Department Of Electronic Engineering Chang Gung University
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概要
関連著者
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Chang Ruey-dar
Department Of Electronic Engineering Chang Gung University
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Tsai Jung-ruey
Department Of Electronic Engineering Chang Gung University
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Ho Li-wei
Department Of Electronic Engineering Chang Gung University
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CHANG Ruey-Dar
Department of Electronic Engineering, Chang Gung University
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CHIANG Hsiao-Pai
National Nano Device Laboratories
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LIU Hsien-Wen
Nanya Technology Corporation
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HO Li-Wei
Department of Electronic Engineering, Chang Gung University
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CHIANG Po-Chen
Department of Electronic Engineering, Chang Gung University
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TSAI Jung-Ruey
Department of Electronic Engineering, Chang Gung University
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LIN Jengping
Department of Electronic Engineering, Chang Gung University
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Chiang Po-chen
Department Of Electronic Engineering Chang Gung University
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Lin Jengping
Department Of Electronic Engineering Chang Gung University
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Chang R‐d
Chang Gung Univ. Taoyuan Twn
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Ling Yu-Ting
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.
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Chang Ruey-Dar
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.
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Liu Taylor
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.
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Ma Chia-Chi
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 33302, Taiwan, R.O.C.
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Ma Chia-Chi
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 33302, Taiwan, R.O.C.
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Tsai Jung-Ruey
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hua 1st Road, Kwei-Shan, Taoyuan 333, Taiwan, R.O.C.
著作論文
- Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
- Diffusion of Indium Implanted in Silicon Oxides
- Transient Dose Loss of Phosphorus during Postimplantation Annealing at 800 °C