Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress

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概要

• 論文の詳細を見る

• Metal oxide semiconductor field effect transistors(MOSFETs)fabricated using various combinations of lightly-doped-drain(LDD)spacer materials(e.g.Si_3N_4 versus SiO_2)and inter-metal-dielectric(IMD)materials(e.g.silane versus tetraethoxysilane plasma-enhanced chemical vapor deposition oxide)were used to investigate the effect of IMD materials and nitride spacers on MOSFET degradation under hot carrier stress. According to the results, nitride spacers significantly enhance the hot-carrier reliability of nMOSFETs ; however, the water-blocking property of nitride spacers fails to eliminate the IMD-induced device degradation. For pMOSFETs, there is negligible difference in hot carrier immunity between devices with oxide and nitride spacers.

• 社団法人応用物理学会の論文
• 2000-01-15

著者

• Lin Jengping

  Department Of Electronic Engineering Chang Gung University

• Lin Jengping

  Department Of Electronics Engineering Chang Gung University

• Liu Willie

  Department Of Electronics Engineering Chang Gung University

• LIN Chi-Hui

  Nanya Technology Corporation

関連論文

• Observation of Transient Enhanced Diffusion in B^+-Implanted Si by Buried Boron Isotopes
• Improvement of Al/GaAs Schottky Junction Characteristics Using a Thin Praseodymium Interlayer
• Effects of Nitride Lightly-Doped-Drain Spacers on Inter-Metal-Dielectrics-Induced Metal Oxide Semiconductor Field Effect Transistor Degradation under Hot Carrier Stress

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