Kwong Dim-lee | Microelectronic Research Center The University Of Texas At Austin
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概要
関連著者
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Kwong Dim-lee
Microelectronic Research Center The University Of Texas At Austin
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Sim Jang
International Sematech
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Lee Byoung
Sematech Tx Usa
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Kwong D‐l
Univ. Texas At Austin Tx Usa
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CHANG Ruey-Dar
Department of Electronic Engineering, Chang Gung University
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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YOUNG Chadwin
SEMATECH
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SIM Jang
SEMATECH
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BERSUKER Gennadi
SEMATECH
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ZEITZOFF Peter
SEMATECH
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Lee Byoung
Ibm
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CHU Paul
Department of Physics and Materials Science, City University of Hong Kong
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Chu Paul
Department Of Physics And Materials Science City University Of Hong Kong
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Young Chadwin
International Sematech (ismt)
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Chang Ruey-dar
Department Of Electronic Engineering Chang Gung University
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CHOI Philip
Microelectronics Research Center, University of Texas at Austin
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GARDNER Mark
Advanced Micro Devices
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Choi Philip
Microelectronics Research Center University Of Texas At Austin
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Lee Sungjoo
Silicon Nano Device Lab Department Of Electrical And Computer Engineering National University Of Sin
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Kwong Dim-Lee
Microelectronics Research Center, Department of Electrical and Computer Engineering,
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Kwong Dim-Lee
Microelectronics Research Center, R9950, The University of Texas at Austin, Austin, TX 78758, USA
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Ahn Jinho
Department of Materials Engineering, Graduate School of Advanced Materials and Chemical Engineering,
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Ahn Jinho
Department of Material Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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AHN Jinho
Department of Computer Science, Kyonggi University
著作論文
- Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
- Time Dependence of Phosphorus Diffusion and Dose Loss during Postimplantation Annealing at Low Temperatures
- Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
- Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides