Sim Jang | International Sematech

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Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
Transient charging and relaxation in high-k gate dielectrics and its implications
Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

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