Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

概要

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Recent results on device instability indicate that the methodologies developed for electrical characterization of metal oxide semiconductor (MOS) devices with SiO2 gate dielectric may not be sufficiently accurate for high-k devices. While the physical origin of the instabilities in high-k devices is yet to be identified, it is found that many of the abnormal electrical characteristics of high-k devices can be explained by assuming fast and slow transient chargings in high-k dielectric. In this paper, transient charging effects in high-k gate dielectrics are reviewed and their implications on test methodologies are discussed.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-04-15