Transient charging and relaxation in high-k gate dielectrics and its implications

スポンサーリンク

概要

論文の詳細を見る
2004-09-15

著者

関連論文

Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration
Ultra-Short Pulse Current-Voltage Characterization of the Intrinsic Characteristics of High-κ Devices
Ultra-Short Pulse I-V Characterization of the Intrinsic Behavior of High-κ Devices
NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ALD-TiN Gate Stacks
Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications
Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
Transient charging and relaxation in high-k gate dielectrics and its implications
Trapping/de-trapping gate bias dependence of Hf-silicate dielectrics with poly and TiN gate electrode
Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
Effects of O_2 Plasma Treatment on the Reliabilities of Metal Gate/High-k Dielectric MOSFETs
Charge Trapping Characteristics of Hafnium Based High-κ Dielectrics with Various Metal Electrodes
Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor
Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
Negative Bias Temperature Instability Dependence on Dielectric Thickness and Nitrogen Concentration in Ultra-scaled HfSiON Dielectric/TiN Gate Stacks
Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
Transient Charging and Relaxation in High-k Gate Dielectrics and Their Implications

もっと見る

スポンサーリンク