Improved Hot Carrier Reliability Characteristics of Metal Oxide Semiconductor Field Effect Transistors with High-$k$ Gate Dielectric by Using High Pressure Deuterium Post Metallization Annealing
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概要
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High pressure deuterium annealing on the hot carrier reliability characteristics of HfSiO metal oxide semiconductor field effect transistor (MOSFET) was investigated. Comparing with the conventional forming gas ($\text{H$_{2}$}/\text{Ar}=10\%/96\%$, 480 °C, 30 min) annealed sample, MOSFET annealed in 5 atm pure deuterium ambient at 400 °C showed the improvement of linear drain current, reduction of interface trap density, and improvement of the hot carrier reliability characteristics. These improvements can be attributed to the effective passivation of the interface trap site after high pressure annealing and heavy mass effect of deuterium. These results indicate that high pressure pure deuterium annealing can be a promising process for improving device performance as well as hot carrier reliability, together.
- 2007-09-25
著者
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Park Hokyung
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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CHOI Rino
SEMATECH
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LEE Byoung
IBM Assignee
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Park Hokyung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Rino
SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, U.S.A.
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