Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-$k$ Gate Dielectric

概要

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The capacitance-voltage ($C$-$V$) characteristics with and without light illumination were evaluated for a capacitor with a Pt gate on the atomic-layer-deposited HfO2 dielectric. The flat-band voltage ($V_{\text{fb}}$) is conventionally determined by a $C$-$V$ curve. However, the extracted values of $V_{\text{fb}}$ were dependent on the $C$-$V$ sweep direction and the starting voltage of the sweep ($V_{\text{start}}$). The increasing differences between $V_{\text{start}}$ and intrinsic $V_{\text{fb}}$ ($V_{\text{fb,i}}$) results in the increasing deviations of $V_{\text{fb}}$ from $V_{\text{fb,i}}$. Therefore, the value of $V_{\text{start}}$ should be close to $V_{\text{fb,i}}$ and different values of $V_{\text{start}}$ must be applied to the devices with significantly different $V_{\text{fb,i}}$.
Japan Society of Applied Physicsの論文
2005-01-10