Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2
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概要
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For n-type metal–oxide–semiconductor (NMOS) devices, a metal gate with a very low effective work function ($\Phi_{\text{m,eff}}$) is necessary. In this paper, we evaluate the $\Phi_{\text{m,eff}}$ values of ScNx gates on both SiO2 and atomic-layer-deposited (ALD) HfO2. The ScNx/SiO2 samples have a wide range of $\Phi_{\text{m,eff}}$ values from ${\sim}3.9$ to ${\sim}4.7$ eV. However, the ScNx gates on HfO2 show a relatively narrow range of $\Phi_{\text{m,eff}}$ values from ${\sim}4.5$ to ${\sim}4.8$ eV due to the Fermi level pinning (FLP) effect. The generation of oxygen vacancies may result in the extrinsic FLP near the ScNx/HfO2 interface. Therefore, ScNx is an NMOS-compatible electrode on SiO2 and the extrinsic FLP should be suppressed for NMOS devices with HfO2.
- Japan Society of Applied Physicsの論文
- 2006-01-25
著者
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Heo Sungho
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Lee Dongkyu
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Yang Hyundoek
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Choi Sangmoo
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Choi Sangmoo
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Heo Sungho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Dongkyu
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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