Ultrashallow p^+/n Junction Formation by 0.5-1 keV Ion Implantation
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概要
- 論文の詳細を見る
We have evaluated the electrical characteristics and the secondary ion mass spectroscopy (SIMS) depth profile of an ultra-shallow junction formed by the 0.5-1 keV boron implantation method. The modeling of the boron profile was performed using the Monte Carlo method for an as-implanted profile and the computationally efficient method for transient enhanced diffusion. A junction depth of less than 300Å can be obtained by rapid thermal annealing at 900℃ for B implantation at 0.5 keV. In the case of annealing at 1000℃, the junction depths were approximately 500-550Å for both 0.5 keV and 1 keV. For the same equivalent energy, the junction depth of BF_2 is shallower than that of boron after annealing. For an ultrashallow junction, HF dipping prior to rapid thermal annealing causes a significant loss of dopant and high sheet resistance.
- 社団法人応用物理学会の論文
- 1998-11-15
著者
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Lee K
Korea Univ. Seoul Kor
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HWANG Hyunsang
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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PARK Jihwan
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology
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Park Jihwan
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Lee Jeong-youb
Semiconductor Research Div. Hyundai Electronics Industry
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LEE Kilho
Semiconductor Research Div., Hyundai Electronics Industry
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