Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer
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概要
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Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (${\sim}8$ nm) layer by atomic layer deposition. The bilayered titanium oxide active layer showed a significantly improved performance, such as a larger ON/OFF ratio, a stable resistive switching over 100 times under a dc voltage sweep, cell-to-cell uniformity, and high device yield (${>}90$%). These improved properties can be explained by the transition of the resistive switching mechanism from filamentary switching through the defective side in solution-processed TiOx to interfacial switching resulting from the oxygen ion migration between two active layers.
- 2011-04-25
著者
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LEE Kwanghee
Department of Material Science & Engineering, Gwangju Institute of Science and Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Siddik Manzar
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Biju Kuyyadi
Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Liu Xinjun
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Kim Insung
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Jung Seungjae
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea
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Lee Kwanghee
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Shin Jungho
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Seo Kyungah
Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Kong Jaemin
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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