Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics
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概要
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Electrical and reliability characteristics of HfO2 gate dielectrics prepared by low-temperature ozone (O3) oxidation of ultra thin Hf metal were investigated. Compared with control HfO2 annealed in O2 ambient, HfO2 annealed in O3 ambient exhibited excellent characteristics such as lower leakage current density, lower hysteresis, lower frequency dispersion, lower degree of charge trapping ($\Delta V_{\text{g}}$), and larger charge to breakdown ($Q_{\text{bd}}$) under electrical stress. The improved electrical and reliability characteristics can be attributed to the lower density of charge trap sites which are related to nonstoichiometry and oxygen vacancy. HfO2 prepared by O3 oxidation is a promising alternative gate dielectric for future metal–oxide–semiconductor (MOS) device applications.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Sim Hyunjun
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Hwang Hyunsang
Department Of Materials Science And Engineering Gwangju Institute Of Science And Technology
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Chang Hyosik
Department Of Materials Science And Engineering Kwangju Institute Of Science And Technology
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Hwang Hyunsang
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, #1, Oryong-dong, Puk-gu, Kwangju 500-712, Korea
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Sim Hyunjun
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, #1, Oryong-dong, Puk-gu, Kwangju 500-712, Korea
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Chang Hyosik
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, #1, Oryong-dong, Puk-gu, Kwangju 500-712, Korea
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